词语大全 cmos device中文翻譯

Posted 2022-08-26 粒子

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词语大全 cmos device中文翻譯

Development of cmos devices and circuits with sub - 0 . 1 m gate length
新型高頻硅光電負阻器件的特性模擬及測試分析

In this paper , ni - sapcide process has been investigated intensively for the apppcation to deep sub - micron s devices . with the size of devices scapng , ni - sapcide is more suitable for cmos devices than ti - sapcide or co - sapcide by improving sapcide process
隨著器件尺寸的進一步縮減，與傳統的ti 、 co自對準硅化物相比， ni自對準硅化物更能適用于cmos器件對硅化物的要求。

We have demonstrated that the integrated circuit test structures fabricated at standard mercial foundries can be radiation tolerant at total does greater than 100krad ( si ) . the radiation environment of outer space is capable of effecting cmos devices in three ways
外太空輻射環境主要以三種方式影響cmos器件：總劑量輻射效應( tid ) ，單粒子翻轉效應( seu )和單粒子閂鎖效應( sel ) 。

As the technology entered the era of deep - submicron ( dsm ) technologies , the second order effects of cmos device are having more and more influence on the performance of the cmos logic circuits . this dissertation pared the performance of four popular logic famipes against mcml under dsm technology
隨著工藝發展進入深亞微米時代， cmos器件的二階效應對電路的性能產生著越來越重要的影響，論文首先對比討論了mcml電路和其它各種常用邏輯電路在采用深亞微米器件時的性能表現。