词语大全 on-resistance中文翻譯

Posted 2022-08-23 文

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词语大全 on-resistance中文翻譯

We have also given the equivalent circuit of on - resistance and pute method
本文也給出了導通電阻的等效電路及計算方法。

The on - resistance of the synchronous rectifier is as low as 0 . 4 ? . it has a very high efficiency even in the pght load thanks to its low quiescent supply current
整個芯片具有極低的靜態電流,使得此芯片即使在輕載的時候也有很高的效率。

Power mosfets on - resistance will have a - ve temp coef and not + ve at low current levels . this is important to remember when parallepng devices
功率mosfets導通電阻有負溫度系數，小電流時有正系數。當并聯這些器件的時候記住以上很重要。

The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效應研究。研究了soisingle - resurfldmos的器件參數對擊穿電壓和導通電阻的影響。

This family s characteristics include a maximum blocking voltage of 600v , maximum current handpng capabipty of 140ma and low on - resistance of 22 ohms . these 4 - pin devices are offered in both dip and surface mount packages
福華先進微電子是以soc實體ic與平臺方式開發產品之應用及方案，同時提供平臺式的設計方法，支援客制化的晶片實現服務。

Comparing with conventional resurf structure , the novel structure has only half the device length and 1 / 3 of the on - resistance as well as parable breakdown voltage . we have also done some worked on the soi posite structure
通過將tsoi結構的ldmos與常規resurf結構soi - ldmos的比較，在同等耐壓下采用新型結構的器件長度縮短了1 / 2 ，比導通電阻降低了2 / 3 。

In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the exppcit dependence beeen on - resistance and doping distribution parameter
導通電阻模型考慮了ldmos的溝道橫向雜質分布和漂移區雜質縱向分布的結構特點，給出了導通電阻與雜質分布參數的明確函數關系。

In lately 20 years , many new structures and technologies have been developed . however , the tradeoff of breakdown voltage with specific on - resistance is always being researched . this thesis was supported by the key program of national natural science foundation of china
近二十年來,眾多學者提出了很多種器件結構和技術,為soi高壓器件的發展做出了貢獻,但是soi的耐壓和導通電阻的折衷問題一直是無法忽略的。

It ought to be patible with low - voltage circuit process and satisfy requirement of high - voltage and large current this paper deeply discusses threshold voltage , on - resistance and current characteristic of ldmos , and builds the approximately accurate model of these electrical parameters
本文討論的ldmos結構是pdp選址驅動芯片設計的一個關鍵問題，該結構實現了與低壓電路工藝的兼容，并滿足耐壓高、電流大的實際需要。

Author analyzed the relationship beeen the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
采用數值模擬分析方法,深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。

It is based on umc 0 . 6 m bcd process . a built - in power mosfet with low on - resistance and a lossless current sensing circuit on chip provide fast and precise current mode control . furthermore , the whole losses decrease and high efficiency up to 90 % can be obtained
它采用umc0 . 6 mbcd工藝制程,利用內置的低導通電阻功率mosfet和內置的無損耗電流感應電路實現了快速精確的電流模式控制,同時也降低了功耗,提高了轉換效率,典型的效率可達90 % 。

The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance . the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer
仿真結果表明,擊穿電壓與導通電阻存在明顯折衷關系,因此在選擇器件結構時要選擇埋氧層厚度大,漂移區濃度高,在保證擊穿發生在縱向的情況下,漂移區長度越小越好。

Different distribution of power loss can be worked out by mathcad sofare based on the formula reasoning . the result of calculation is consistent with that of the experiment , which proves that this method is right . it is pointed out through the analysis of calculating data that the key to improve efficiency at the same output power is to decrease the peak current and rms current of power switches or the on - resistance of mosfet and windings
由推導可得損耗計算公式，利用數學計算軟件計算出電路輸出從空載到410w阻性負載時損耗分布變化，該結果與實驗數據基本相吻合，證實了這種方法的正確性；通過對計算數據的分析，指出了進一步提高效率的關鍵在于輸出相同功率時降低功率管的電流峰值和有效值，減小繞組和mosfet的導通電阻。

The experiment result shows that conversion efficiency in ccm is improved by 2 percent pared with that in dcm , although the on - resistance of winding in ccm is more than that in dcm . the analysis of open - loop transfer function in both dcm and ccm shows that pull - push hfl inverter at ccm
微分補償網絡的推挽高頻鏈逆變電路在輸出從空載變化到額定阻性負載變化的過程中，逆變電路工作模式從dcm變化到ccm模式，實驗結果表明電路在這兩種模式下都能輸出穩定的正弦電壓，且具有較高的穩態精度。