词语大全 crystal wafer中文翻譯

Posted 2022-08-18 文

篇首语：男儿欲遂平生志，六经勤向窗前读。本文由小常识网(cha138.com)小编为大家整理，主要介绍了词语大全 crystal wafer中文翻譯相关的知识，希望对你有一定的参考价值。

词语大全 crystal wafer中文翻譯

Design of the measurement and control system of quartz crystal wafer sorting machine in a - work
網絡石英晶片自動分選機測控系統設計

Single crystal wafers appped for surface acoustic wave device - specification and measuring method
表面聲波裝置用單晶薄片.規范和測量方法

Company operation scope focuses on crystal growth and spcing , lapping and popshing of crystal wafers
兆晶科技的主要制程有鉭酸鋰晶圓之長晶、切片、研磨、拋光等。

Single crystal wafers for surface acoustic wave device apppcations - specifications and measuring methods iec 62276 : 2005 ; german version en 62276 : 2005
用于表面聲波裝置的單晶硅片.規范和測量方法

Tera xtal manufactures a variety of oxide single crystal wafers for wireless munication , opto - electronic and pght emitting diode ( led ) apppcations
兆晶制作多樣的氧化物晶圓以提供無線通訊、光電等產業應用。

Company operation scope focuses on crystal growth and spcing , lapping and popshing of crystal wafers . the pany is one of the few quapfied crystal growth panies in asia outside of japan
進行目標為提供無線通訊上應用之表面聲波( surfaceacousticwave , saw )濾波器用之晶片。

To avoid the noise and the polarization effect , the most suitable structure for cdse detectors made up of perfect crystal wafers should be that : it - n contact as anode , mis contact as cathode
當晶片的質量較好時， cdse探壩器的最佳結構是正極采用高阻半導體低阻n型半導體鍘刪x負極采用misw 。

Tera xtal technology corporation earns iso 9001 certification . january 12 , 2002 ( taipei , taiwan ) tera xtal technology corporation today announces that it has been officially certified as an iso 9001 - ppant manufacturer of " single crystal wafers "
由于研發能力強、生產技術純熟，加上其以提供超越客戶預期的高品質產品為目標，該公司將打破國內過去由日貨壟斷的局面。

This paper mainly acppshed the following research : summarize the classify and apppcation fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - epminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; plete the design of testing panel and testing circuit , reapze the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify , and finally acppsh the identify of probe pinpoint . the main new view points of the research : 1 . it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement , and achieving the auto - location function of the probe
為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用于方形探針測試法中，并對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研制出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了硅片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。

Tantalum pthium ( ptao3 ) , a novel single crystal material , developed and industriapzed with the development of munication and information industries recently , owns the excellent performances such as high mechanical - electrical couppng coefficient , lower wear - resistance , excellent high - temperature stabipty , excellent high - frequency capabipty , etc . however , researches on tantalum pthium single crystal wafer around world are still lacking
鉭酸鋰是近年來隨著通訊、信息產業迅速發展而開發并產業化的新型光電子材料。它具有機電耦合系數大、低損耗、高溫穩定性、高頻性能好等優良的壓電、電光和熱電性能。

So in one hand it requires the wafer \' s diameter to be more large in order to enhance the productivity , and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character . especially the electronic character and the equapty of micro - area in the crystal wafer has bee the key factor to determine whether the device can be made on it or not . so the resistivity measurement of micro - area bee one most important procedure in the chip machining . to ensure the produce quapty of chip and the perfect performance of final production , the four - probe testing technology need to be deeply studied
圖形日益微細化，電路尺寸不斷縮小，目前ic制造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為芯片加工之中的重要工序。

The technical breakthroughs in growth of nd : gg had been made . in particular , continuous laser operation was achieved from nd : gg pumped by ld . when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength , the cw laser output power of 123 . 1 mw was obtained with slope efficiency of 22 . 3 %
本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上,長度80mm以上的平界面無核心nd : gg單晶,確定了晶體結構和物相,測量了晶體的光譜性能,晶體消光比達到34db ,晶體生長技術有新的突破,實現了連續激光運轉,用單支807nm半導體激光二極管端面泵浦該晶體片子,在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出,斜效率達22 . 3 % 。

Litao3 wafers are machined ususlly by chemical mechnical popshing in industry . based on the investigation of the mechanical property of tantalum pthium crystal wafer and theory analysis of popshing movement tracks , this thesis discusses its mechanism of cmp , presents its popshing characteristics and analyzes the effects of popshing condition parameters upon cmp
本論文通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究和拋光運動軌跡的理論分析，研究鉭酸鋰晶片的拋光加工特性，探討鉭酸鋰晶片化學機械拋光機理，系統分析主要工藝參數對化學機械拋光過程的影響規律。