词语大全 oxygen vacancy中文翻譯

Posted 2022-08-15 薄膜

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词语大全 oxygen vacancy中文翻譯

On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
另一方面,氧等離子體處理使ito薄膜表面的富sn氧化物進一步氧化,形成穩定的sno ,減少了ito薄膜表面的氧空位和sn ~ ( 4 + )數量,使其功函數增大。

Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
( 2 )使用十六醇對納米管鈦酸進行了化學修飾，結果表明納米管表面與十六醇發生酯化反應。

The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
Ito結構中的氧空位和錫摻雜使得它具有很強的導電性，較大的能帶間隙寬度( e _ g 3ev )使得它具有很強的光透明性。

The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible pght , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
從光致發光特性曲線發現，納米孔陣列aam在400一600nm之間有一個藍色發光帶，該發光帶來源于單離子氧空位。

In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystalptes , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
在可見發光機制探討中，為了證明氧空位或缺陷是分布在納米晶表面，我們提出氧化鋅中摻雜錳（ zno ： mn ），研究了zno ： mn薄膜的光致發光（ pl ）。

It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample bee larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
實驗還發現，隨著襯底溫度的升高，薄膜中產生的氧空位將會增多，使得zno薄膜的電導逐漸增大，而且其紫外透射吸收截止邊帶向高波長方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對減少，薄膜的透射吸收截止邊向低波長方向漂移。

It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample bee larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
實驗還發現，在一定的溫度范圍內隨著襯底溫度的升高，薄膜中產生的氧空位將會增多，使得ito薄膜的電導逐漸增大，而且其紫外透射吸收截止邊帶向短波長方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對減少，薄膜的透射吸收截止邊向低波長方向漂移。

The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge pensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobipty
通過電學和熱學性能測試結果表明，電導率隨著sr含量的增加以及溫度的變化都出現了極大值，在本論文中，在sr含量為0 . 4時電導率值最大，電導率最大值對應的溫度隨著sr含量的增加而降低，這是由于在低溫下以小極化子導電機理為主，在高溫階段則是氧空位的電荷補償占據主導作用，氧空位使得載流子的濃度和可動性減弱，從而導致電導率降低。

With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a plex co - function of al , si , and o . el devices have been fabricated on three types of sipcon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源于電子和空穴在510 、基質中的發光中心的輻射復合發光。

By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
通過考察形成三種不同類型sno _ 2 ( 110 )缺陷表面的缺陷形成能,結果表明,形成同時具有橋氧和面氧缺陷的構型能量上最為有利,這與通常所認為的橋氧缺陷最為穩定不同。

Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity . the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism , the behaviors of gas - sensor for hydrogen and ethanol manifest dissimiptude . this is due to that the oxygen vacancies were pensated by the impurity
用濺射制備的薄膜摻入部分雜質對還原性氣體進行氣敏測試，發現tio _ 2薄膜對酒精氣體和氫氣有不同的反應機制和電子注入機理，氣敏特性也表現出不同，而雜質的引入反而降低了tio _ 2薄膜的敏感性，可能是由于雜質對氧空位的補償所引起。

We also have analyzed the photoluminescence ( pl ) spectra of some zno films , it turns out that the emission of ultraviolet pght es from the radiative rebination of excitons within nano - crystal energy band - gap , and the pl peaks move to smaller wavelength because zn are substituted by fe , co , and cu , which cause the size of the film grains smaller and the effective band - gap bigger . the red emission of zno films is due to , on the one hand , decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly , on the other hand , the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源于帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由于fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。

The charge related to esd can be pensated by oxygen environment , oxygen environment works mainly through making up oxygen vacancy and repairing energy band distortion in time . heating the sample and reducing defect concentration can reduce the charge related to inner defects
對于樣品表面電子受激解吸造成的充電可通過氧環境提供補償,氧環境主要是通過及時補充氧空位、修復能帶扭曲起作用的；對于電子束調制內部缺陷造成的充電可通過加熱試樣減輕缺陷濃度來補償。