词语大全 橫向電場的英文
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词语大全 橫向電場的英文
Calculation results show that 90 % carriers will populate in the first ten subbands when effective field is larger than 105v / cm
計算表明,當橫向電場為105v / cm時,前十個子能帶上的載流子濃度占總濃度的90 % 。
Both the theoretical simulation and experiment results show that the relationship beeen eff and eeff in strained - si is similar to the one in bulk si . the mobipty reaches its maximum when eeff equals to 2 105v / cm
理論分析和實驗結果表明,應變硅載流子遷移率與橫向電場eeff的函數關系與體硅材料類似,峰值遷移率所對應的eeff為2 105v / cm 。
Then , a prehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation
當有效橫向電場較低時，庫侖散射在sic反型層的電子輸運中起主要散射作用，而當有效橫向電場升高時，表面粗糙散射的作用會變得愈來愈顯著。
For strained si pmosfets , the hole mobipty is not only determined by the tensity of strain , but also related to the strain types , which are uniaxial pressive strain and biaxial tensile strain . when electric field is high enough , the hole mobipty will be deteriorated in pmosfets under biaxial tensile strain , however , in the case of uniaxial pressive strain , the deterioration will never occur
經模型分析發現,應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高( > 5 105v / cm )時,雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化,而單軸壓應力器件則不會受到影響。
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