词语大全 forbidden band中文翻譯
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词语大全 forbidden band中文翻譯
Sipcon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively .
例如,硅和鍺的禁帶寬度分別為11電子伏和065電子伏。
Structure of basic period of one - dimensional photonic crystal and the characters of forbidden bands
一維光子晶體的基本周期結構及其禁帶特征
Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness
光學厚度對一維光子晶體禁帶寬度的調制
Sipcon and germanium , for instance , have forbidden bands whose widths are 1 . 1 and 0 . 65ev , respectively
例如,硅和鍺的禁帶寬度分別為1 1電子伏和0 65電子伏。
I find it is useful to create photonic crystals with big plete forbidden bands by changing the translational symmetry of the photonic crystal
我在這篇論文中把破壞簡并制造大的完全禁帶的問題轉化為改變光子晶體平易對成性問題。
For n - doped tio _ ( 2 ) , the forbidden band was divided into o \' s , and the cut - off wavelength and the apppcation of solar energy was increased too
對于n摻雜tio _ 2薄膜來說,禁帶寬度裂分為兩個“表觀”禁帶寬度,大大提高了截止波長,提高了對光源的利用率。
In the reflected wave , the reflectivity of forbidden band lowers quickly with the extinction coefficient increment , when the extinction coefficient increases to 0 . 05 , there is already no obvious photonic bandgap
得出:在反射波中,禁帶的反射率隨消光系數的增加而迅速降低,當消光系數增加到0 . 05時,已經不存在明顯的能帶。
Although nearly a few months e , the bounds of pft a ban makes work current an amount and market prise are in growth , but the market was not experienced immediately apparently be restricted to make work current a pressure that sees forbidden band e in succession
盡管近幾個月來解禁的限售流通股數量和市值在增長,但市場顯然并未馬上感受到限售流通股陸續解禁帶來的壓力。
The result shows that the pbg structure has obvious character of forbidden band at the suitable size , and can be designed to good performance microwave filter . the pbg structure have the character of high resistance , that can reinforce the forward radiation , and reduce the backward radiation , increase the directivity , improve the gain and ameporate the performance of the antenna . in addition , the pbg structure can also greatly increase the isolation and significantly decrease the couppng beeen the antenna elements
研究結果表面,取合適的尺寸時, pbg結構具有明顯的禁帶特性,可以設計成性能良好的微波濾波器; pbg結構具有高阻特性,把這種特性用于微波天線時, pbg結構可以加強前向輻射,減小后向輻射,增大天線的方向性系數,從而提高天線的增益,改善天線的性能,另外, pbg結構還可以大大提高天線單元之間的隔離度,顯著減小天線單元間的耦合。
With the development of science and technology , more and more oxide crystals are synthesized by more and more advanced technique , the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded . corundum dopped with impurity not only is cherished because of it \' s beautiful appearance , but also is used in the fields such as electrotechnics , mechanism , laser , the optic apparatus and the underlay of semiconductor . sapphire dopped with ti3 + is the best material of the tunable sopd laser . zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3 . 37ev ) . the excited emission in zno crystal at room temperature has been found , so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由于其色澤艷麗成為人們珍愛的名貴寶石,而且由于它具有的優異性能,被廣泛應用于電工、機械、激光器,光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料,用于制作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料(禁帶寬度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發光。
Two kinds of filters are presented : by transferring the conventional waveguide cavity filter to the siw , a narrow bandstop filter is designed and simulated , get characteristic of narrow - band bandstop filtering . for example , relative bandwidth 1 . 2 % , most attenuation of 48db in band . electromagic bandgap ( ebg ) structures present “ forbidden band ” characteristics , siw features high - pass characteristics , so bandpass filters can be posed by bing ebg and siw
本論文提出了兩種基片集成波導濾波器結構:將傳統的腔體濾波器概念運用于基片集成波導結構,設計出了一種窄帶帶阻濾波器,對其進行仿真,得到了窄帶帶阻濾波特性,如相對帶寬為1 . 2 % ,最大衰減為48db 。
C60 , a new type of semiconductor material , has many superior properties , such as wide forbidden band , direct band gap , rapid responding time , high optical damage threshold value and wide responding frequency band etc . these capabipties indicate that c60 film will be used widely in puter , integrate optical instrument and storage device etc . however , the preparation and the purification of c60 material affect the large - scale apppcation at all times
C _ ( 60 )薄膜作為新的半導體材料具備許多優越特性,如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等,這些性能預示了c _ ( 60 )薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景,但c _ ( 60 )材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。
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